| PART |
Description |
Maker |
| MMBT3904-TP |
TRANSISTOR NPN GP 40V SOT23 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
|
| 2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| FMMT6517 FMMT6517TA FMMT6517-15 |
NPN High Voltage Transistor
500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SOT23 NPN SILICON PLANAR
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
List of Unclassifed Manufac...
|
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| FMMT491A FMMT491ATA |
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Diodes Incorporated
Diodes, Inc.
|
| MMBT4124LT1G |
Gereral Purpose SOT23 NPN 20V; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
General Purpose Transistor NPN Silicon
|
ON Semiconductor
|
| BC440-4 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-39
Bipolar NPN Device in a Hermetically sealed TO39
|
Seme LAB
|
| DSS5240T-15 |
40V PNP LOW SATURATION TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| ECG340 ECG330 ECG330W ECG331 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-92VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 15A I(C) | TO-220
|
|
| FMMTA42 FMMTA42TA |
SOT23 NPN Silicon planar high voltage transistor
FMMTA42 SOT23 NPN Silicon planar high voltage transistor
|
Diodes Incorporated
|
| 92PU57 92PU52 92PU45 92PU02 92PU51 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-237VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 800MA I(C) | TO-237VAR 晶体管|晶体管|进步党| 40V的五（巴西）总裁| 800mA的一（c）|37VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-237VAR 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁|甲一（c）|37VAR
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-237VAR 晶体管|晶体管|叩| 40V的五（巴西）总裁| 800mA的一（c）|37VAR
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 2A I(C) | TO-237VAR
|
Flambeau, Inc.
GE Security, Inc.
|
| MMBT2222A-13-F MMBT2222A-7-F |
40V NPN SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
|
